Ferroelectrides have been considered as an alternative to traditional solid state devices for over a decade now, but have never made it out of a lab, due to the lack of research involving the stability of the matter in any of its forms. This website examines the possibility of Silicon-doped ferroelectrides and correlated oxides in the next generation of active solid state devices, primarily focusing on Field Effect Transistors (FETs). This website also observes the research results involving the use of correlated oxides and ferroelectric gates in lab studies to explore the technology’s future in commercial solid state devices. ![]()
|