Correlated oxide switches are a superior technology to the traditional Germanium-doped and Silicon-doped transistor market. In an experiment conducted by Harvard researchers, Martin Dominik and fellow researchers used a Silicon-Hafnium-doped field effect transistor with an experimental gate stack to demonstrate the benefits of ferroelectrides switches whilst also disproving the adequacy of previous (Silicon-based) architectures. Martin was quoted saying, “The physical film thickness of this ferroelectric gate stack is within the range of thicknesses used in recent technology nodes. This puts the [Ferroelectride Field Effect Transistor] back into the scope of consideration as a candidate for future memory technologies” ("Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2." 2013).
The benefit Martin mentions is a basic principle of the operation of a switching transistor – the less resistance on a gate stack, the quicker it can change states. Mathematically, the speed of this transition is represented as a limit approaching infinity with a decrease in gate size, which suggests that speed is only limited by the thickness of this gate and otherwise is theoretically possible to be infinite. This is an area where correlated oxides are superior, due to the laws of physics surrounding traditional field effect transistors used today. In current technology, an amperage is required in order allow the switch to change states. This current (amperage) has a byproduct of an electromagnetic field, which is small, but existent. The Electromagnetic Field then introduces a resistance on the gate stack, which results in a slower switching speed. In comparison, ferroelectrides switches need no current, but only and EMF signal to induce voltage and create a chemical reaction. This results in the desired switching action by transporting electrons in an orbital-loop replacement in comparison to the linear “hole-bridge” that was created for previous diodes requiring current. With this lack of current comes the absence of the electromagnetic field previously present, allowing less resistance on the gate stack and therefore, faster switching speeds. |